Compact RF Switch ICs Using Dielectric Overhang Gate Process and Stacked Inductor
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概要
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In this paper, we present a compact quadrate-gate single-pole double-through RF switch. We could reduce the size of the multiple-gate high electron mobility transistor (HEMT) switch by reducing the length of the ohmic electrode and the distance between the source and drain electrodes without a severe degradation of switch performance. We developed the dielectric overhang gate process to reduce the distance between the source and drain electrodes of the multiple-gate HEMT switch. LC resonance using a stacked multilayer inductor was employed for the enhancement of isolation without extra area consumption.
- 2006-04-30
著者
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KIM Sungwon
School of Electrical Engineering, Seoul National University
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JANG Kyoungchul
School of Electrical Engineering, Seoul National University
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Seo Kwangseok
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Lee Juyoung
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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Kim Sungwon
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Kim Sungwon
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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Jang Kyoungchul
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Jang Kyoungchul
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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