High Electron Mobility Transistors Yield Improvement with Ultrasonically Assisted Recess for High-Speed Integrated Circuits
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概要
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InAlAs/InGaAs high electron mobility transistors (HEMTs) have been a great contribution to the research and development of high-speed integrated circuits, owing to their high electron mobilities, high saturation velocities, and high sheet electron densities. In integrated circuits using a HEMT as active device, the gate recess process has considerable influence on the yield and uniformity. The wet recess of a 0.1 μm gate footprint has difficulty achieving a high yield greater than 98% due to a nonuniform reaction between the etchant and the semiconductor. A uniform initial reaction between the InGaAs cap layer and the wet etchant mainly determines the yield and uniformity. In this paper, we present an ultrasonically assisted recess method of promoting a uniform initial reaction in the recess process. This method enables us to achieve a high yield and a high uniformity in integrated circuits.
- 2006-04-30
著者
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Yeon Seong-jin
School Of Electrical Engineering And Computer Science Seoul National University
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Kim Hyungtae
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
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Kim Hyungtae
School of Electrical Engineering, Seoul National University, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
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Seo Kwangseok
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Seol Gyungseon
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Lee Jongwon
School of Electrical Engineering, Seoul National University, Shillim-dong, Kwanak-gu, Seoul 151-742, Korea
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Seo Kwangseok
School of Electrical Engineering, Seoul National University, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
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