High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
スポンサーリンク
概要
- 論文の詳細を見る
A high-speed and low-power delayed flip-flop circuit with non-return-to-zero mode output using a new negative differential resistance logic element is proposed and fabricated using resonant tunneling diode (RTD)/high electron mobility transistor (HEMT) integration technology on an InP substrate. The number of devices used in the delayed flip-flop and the power dissipation has been significantly reduced by using the proposed scheme. The operation of the fabricated delayed flip-flop is demonstrated up to 26 Gb/s with a very low power dissipation of about 2.8 mW at a power supply voltage of 0.9 V.
- 2007-04-30
著者
-
SEO Kwangseok
School of Electrical Engineering, Seoul National University
-
Kim Hyungtae
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
-
Kim Hyungtae
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
-
Yeon Seongjin
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
-
Seo Kwangseok
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
-
Yeon Seongjin
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
関連論文
- High Performance 0.1μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77GHz Car Radar Applications
- Monostable-to-Bistable Transition Logic Element-Based Literal Gates Using Resonant Tunneling Diodes
- High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
- High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer
- Noninverted/Inverted Monostabel-to-Bistable Transition Logic Element Circuits Using Three Resonant Tunneling Diodes and Their Application to a Static Binary Frequency Divider
- Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal–Insulator–Metal Structure
- Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition
- High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
- Gate Length Reduction Technology for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As High Electron Mobility Transistors
- Compact RF Switch ICs Using Dielectric Overhang Gate Process and Stacked Inductor
- High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure
- High Electron Mobility Transistors Yield Improvement with Ultrasonically Assisted Recess for High-Speed Integrated Circuits
- In0.49GaP/Al0.45GaAs Barrier Enhancement-Mode Pseudomorphic High Electron Mobility Transistor with High Gate Turn-on Voltage and High Linearity
- High Performance 0.1 μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications