High Performance 0.1μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77GHz Car Radar Applications
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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LEE Jaehak
WAVICS Inc.
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KIM Sungwon
School of Electrical Engineering, Seoul National University
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NOH Hunhee
School of Electrical Engineering, Seoul National University
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JANG Kyoungchul
School of Electrical Engineering, Seoul National University
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SEO Kwangseok
School of Electrical Engineering, Seoul National University
関連論文
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- High Performance 0.1 μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77 GHz Car Radar Applications