Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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Lee Jongwon
Seoul National Univ. School Of Electrical Engineering And Computer Science
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KIM Sungwon
Seoul National Univ., School of Electrical Eng.
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JANG Kyoungchul
Seoul National Univ., School of Electrical Eng.
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SEO Kwangseok
Seoul National Univ., School of Electrical Eng.
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LEE Jaehak
WAVICS Inc.
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