High-speed and Low-Power NRZ Delayed Flip-Flop Circuit Using RTD/HEMT Integration Technology

スポンサーリンク

概要

論文の詳細を見る
2006-09-13

著者

関連論文

Integration of MIM Capacitors on BCB with Thin-Film MCM-D Technology
Passivation Effects of 100nm In_AlAs/In_GaAs Metamorphic HEMT With Remote PECVD Grown Si_3N_4 Layer
Pt Buried Gate E-pHEMT with High V_ and Reduced Surface Trap Effects
Compact RF Switches Using Dielectric Overhang Gate Process & Stacked Inductor
In_GaP/Al_GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity
Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage
Transconductance Linearity Improvement of E-pHEMT with High Vg.on
High performance 0.1μm GaAs PHEMT with Si pulse doped cap layer for 77GHz car radar applications
High performance 50nm In_Al_As/In_Ga_As Metamorphic HEMTs with Si_3N_4 passivation on thin InGaAs/InP layer
High-Speed Digital Circuits Using RTD as Load-Element
Novel MOBILE Circuits Using 3 RTDs Operating up to 12.5Gb/s
High performance 70nm In_GaP/In_AlAs/In_GaAs Metamorphic HEMT With Pd Schottky Contacts
The Gate Length Reducing Process for Pseudomorphic In_Al_As/In_Ga_As HEMTs
HEMT Yield Improvement with Ultrasonic-assisted recess for High speed Integrated Circuit
High-speed and Low-Power SCFL-Type NRZ Delayed Flip-Flop Circuit Using RTD/HEMT Integration Technology
High-speed and Low-Power NRZ Delayed Flip-Flop Circuit Using RTD/HEMT Integration Technology
Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage

もっと見る

スポンサーリンク