Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage
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概要
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In this paper we discuss the sources of the transconductance reduction of enhancement-mode pseudomorphic high electron mobility transistor (E-pHEMT) at a high gate bias and methods of improving the transconductance at a high gate bias. E-pHEMT usually suffers from severe transconductance reduction at a high gate bias. Our simulation showed that this reduction is mainly due to the low channel carrier density and high access resistance of the ungated region rather than the parasitic MESFET phenomenon. An epi structure that facilitates electron transfer through the barrier layer of the ungated region and self align gate (SAG) process lead to an improvement in transconductance linearity.
- 2005-04-15
著者
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Lee Jongwon
Seoul National Univ. School Of Electrical Engineering And Computer Science
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LEE Jaehak
WAVICS Inc.
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Kim Sungwon
Seoul National Univ. School Of Electrical Eng.
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Seo Kwangseok
Seoul National Univ. School Of Electrical Eng.
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Jang Kyoungchul
Seoul National Univ. School Of Electrical Engineering And Computer Science
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Lee Jongwon
Seoul National University, School Of Electrical Engineering & Computer Science, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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Lee Jaehak
WAVICS Inc., 4F Emerald Building, 1364-29 Seocho-dong, Seocho-gu, Seoul 137-863, Korea
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Jang Kyoungchul
Seoul National University, School Of Electrical Engineering & Computer Science, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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Seo Kwangseok
Seoul National University, School Of Electrical Engineering & Computer Science, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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