Lee Jongwon | Seoul National Univ. School Of Electrical Engineering And Computer Science
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概要
- LEE Jongwonの詳細を見る
- 同名の論文著者
- Seoul National Univ. School Of Electrical Engineering And Computer Scienceの論文著者
関連著者
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Lee Jongwon
Seoul National Univ. School Of Electrical Engineering And Computer Science
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SEO Kwangseok
Seoul National Univ., School of Electrical Eng.
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Seo Kwangseok
Seoul National Univ. School Of Electrical Eng.
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Yeon Seong-jin
Seoul National Univ. School Of Electrical Engineering And Computer Science
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LEE Jaehak
WAVICS Inc.
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YEON Seong-Jin
Seoul National Univ., School Of Electrical Engineering and Computer Science
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KIM Sungwon
Seoul National Univ., School of Electrical Eng.
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JANG Kyoungchul
Seoul National Univ., School of Electrical Eng.
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SEOL Gyungseon
Seoul National Univ., School Of Electrical Engineering and Computer Science
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Kim Sungwon
Seoul National Univ. School Of Electrical Eng.
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Jang Kyoungchul
Seoul National Univ. School Of Electrical Engineering And Computer Science
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KIM Hyungtae
Seoul National Univ., School Of Electrical Engineering and Computer Science
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Seol Gyungseon
Seoul National Univ. School Of Electrical Engineering And Computer Science
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Kim Hyungtae
Seoul National Univ. School Of Electrical Engineering And Computer Science
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Lee Jongwon
Seoul National University, School Of Electrical Engineering & Computer Science, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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Lee Jaehak
WAVICS Inc., 4F Emerald Building, 1364-29 Seocho-dong, Seocho-gu, Seoul 137-863, Korea
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Jang Kyoungchul
Seoul National University, School Of Electrical Engineering & Computer Science, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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Seo Kwangseok
Seoul National University, School Of Electrical Engineering & Computer Science, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
著作論文
- Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage
- The Gate Length Reducing Process for Pseudomorphic In_Al_As/In_Ga_As HEMTs
- HEMT Yield Improvement with Ultrasonic-assisted recess for High speed Integrated Circuit
- Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage