JANG Kyoungchul | Seoul National Univ., School of Electrical Eng.
スポンサーリンク
概要
関連著者
-
JANG Kyoungchul
Seoul National Univ., School of Electrical Eng.
-
SEO Kwangseok
Seoul National Univ., School of Electrical Eng.
-
KIM Sungwon
Seoul National Univ., School of Electrical Eng.
-
Seo Kwangseok
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
Seo Kwangseok
Seoul National Univ. School Of Electrical Eng.
-
Jang Kyoungchul
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
Kim Sungwon
Seoul National Univ. School Of Electrical Eng.
-
Kim Sungwon
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
Lee Jaehak
Theleds Co. Ltd.
-
Lee Jinsik
Seoul National Univ. School Of Electrical Eng.
-
HER Jincherl
Seoul National Univ., School of Electrical Eng.
-
Her Jincherl
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
Kim Jongwon
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
Lee Jongwon
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
LEE Jinsik
Seoul National Univ., School of Electrical Eng.
-
SEOL Gyungseon
Seoul National Univ., School Of Electrical Engineering and Computer Science
-
LEE Jaehak
Theleds Co., LTD.
-
LEE Juyoung
Seoul National University, School Of Electrical Engineering & Computer Science
-
LEE Juyong
Seoul National Univ., School Of Electrical Engineering and Computer Science
-
LEE Jaehak
Seoul National Univ., School Of Electrical Engineering and Computer Science
-
LEE Jaehak
WAVICS Inc.
-
NOH Hunhee
Seoul Nat'l Univ., School of Electrical Eng.
-
Noh Hunhee
Seoul Nat'l Univ. School Of Electrical Eng.
-
Seol Gyungseon
Seoul National Univ. School Of Electrical Engineering And Computer Science
-
Lee Juyoung
Seoul National University School Of Electrical Engineering & Computer Science
-
Lee Juyong
Seoul National Univ. School Of Electrical Engineering And Computer Science
著作論文
- Passivation Effects of 100nm In_AlAs/In_GaAs Metamorphic HEMT With Remote PECVD Grown Si_3N_4 Layer
- Pt Buried Gate E-pHEMT with High V_ and Reduced Surface Trap Effects
- Compact RF Switches Using Dielectric Overhang Gate Process & Stacked Inductor
- In_GaP/Al_GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity
- Transconductance Linearity Improvement of Enhancement-Mode Pseudomorphic HEMT with High Gate Forward Turn-On Voltage
- Transconductance Linearity Improvement of E-pHEMT with High Vg.on
- High performance 0.1μm GaAs PHEMT with Si pulse doped cap layer for 77GHz car radar applications