Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition

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In0.4AlAs/In0.35GaAs metamorphic high-electron-mobility transistors (MHEMTs) have been successfully fabricated. In order to reduce the surface effects on the barrier layer, Si3N4 layer passivation by remote plasma-enhanced chemical vapor deposition (PECVD) is utilized, which might suppress the surface trap density in side-recessed region and reduce the parasitic resistance. The device simulation was performed to derive the effects of surface trap in the side-recessed region. As the surface trap density decreases, $I_{\text{D.max}}$ increases because of the stabilization of the surface states in the side-recessed region. This result indicates that the increases of $g_{\text{m.max}}$ and $I_{\text{D.max}}$ are related with both the reduction of parasitic resistance and the gate-sinking effect. The fabricated 100 nm MHEMTs with the passivated of Si3N4 layer exhibited excellent characteristics such as a maximum extrinsic $g_{\text{m.max}}$ of 740 mS/mm and a cut off frequency ($ f_{\text{T}}$) of 210 GHz.
2007-04-30