High Performance 50 nm InAlAs/In0.75GaAs Metamorphic High Electron Mobility Transistors with Si3N4 Passivation on Thin InGaAs Layer
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概要
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We fabricated 50 nm InAlAs/InGaAs metamorphic high electron mobility transistors (HEMTs) with a very thin barrier. Through the reduction of the gate–channel distance ($d_{\text{GC}}$) in the epitaxial structure, a channel aspect ratio ($\mathit{AR}_{\text{C}}$) of over three was achieved when $L_{\text{g}}$ was 50 nm. We inserted a thin InGaAs layer as a protective layer, and tested various gate structures to reduce surface problems induced by barrier shrinkage and to optimize the device characteristics. Through the optimization of the gate structure with the thin InGaAs layer, the fabricated 50 nm metamorphic HEMT exhibited high DC and RF characteristics, $G_{\text{m}}$ of 1.5 S/mm, and $ f_{\text{T}}$ of 490 GHz.
- 2008-04-25
著者
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Seo Kwangseok
School of Electrical Engineer and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-742, Republic of Korea
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Yeon Seongjin
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul, 151-742, Korea
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Yeon Seongjin
School of Electrical Engineering and Computer Science, Seoul National University, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea
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Seo Kwangseok
School of Electrical Engineering and Computer Science, Seoul National University, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea
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