Low-Operating-Voltage Organic Field-Effect Transistors with Poly-p-Xylylene/High-k Polymer Bilayer Gate Dielectric
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概要
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A novel bilayer gate dielectric system for organic field-effect transistors (OFETs) operating at a low voltage is investigated. This stacked gate dielectric system consists of cyanoethylpullulan (CyEPL; $k=15.4$) for a high-k polymer and chemical-vapor-deposited poly-p-xylylene (parylene-C) as a covering layer. Pentacene-based OFETs with this dielectric system show a field-effect mobility of 0.34 cm2/(V s), a maximum current on/off ratio of $9 \times 10^{4}$, and a threshold voltage of $-6$ V. This threshold voltage is five times lower than that of a parylene-C monolayer dielectric. This dielectric system is also applicable to OFETs with polymer semiconductors fabricated by solution processes. Parylene-C coating deposited by chemical vapor deposition (CVD) is found to be an effective method of preparing a clean, solvent-tolerant and highly insulated surface. As another means of fabricating a polymer insulator with a high dielectric constant, embedding CyEPL with high-k BaTiO3 nanoparticles is also reported.
- Japan Society of Applied Physicsの論文
- 2006-08-25
著者
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Sakabe Yukio
Murata Manufacturing Co. Ltd.
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Tsutsui Tetsuo
Department Of Applied Science For Electronic And Materials Graduate School Of Engineering Sciences K
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Yasuda Takeshi
Department Of Agricultural Chemistry Kyoto University
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Nakamura Ichiro
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan
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Yasuda Takeshi
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences and Institute for Material Chemistry and Engineering, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Onoue Tomoaki
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan
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Sakabe Yukio
Murata Manufacturing Co., Ltd., Nagaokakyo, Kyoto 617-8555, Japan
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