Large Domain Film of Bis(styrilanthracene) Derivatives Prepared by a Simple Melt-Freezing Process and the Improvement of Field Effect Hole Mobility
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概要
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Bis(styrylanthracene) (BSA) derivatives with long alkyl side chains form thin films consisting of large domains (mm-scale) at room temperature by a simple melt-freezing process. It is revealed by X-ray diffraction that the homogeneous domains are in a single-crystal-like solid state. The film assumes a layered structure with $\pi$–$\pi$ stacking parallel to the film plane. The hole mobility of the field effect transistor composed of the monodomain film is almost two orders of magnitude higher than that of the corresponding amorphous film. This result may be due to $\pi$–$\pi$ stacking developed in the carrier transport direction.
- 2008-06-25
著者
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Fujita Katsuhiko
Department Of Applied Science For Electronics And Material Chemistry Interdisciplinary Graduate Scho
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Tsutsui Tetsuo
Department Of Applied Science For Electronic And Materials Graduate School Of Engineering Sciences K
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Fujita Katsuhiko
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan
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Tsutsui Tetsuo
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan
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Konishi Misuzu
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, 6-1 Kasuga Koen, Kasuga, Fukuoka 816-8580, Japan
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