High Field-Effect Hole Mobility in Organic-Inorganic Hybrid Thin Films Prepared by Vacuum Vapor Deposition Technique
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概要
- 論文の詳細を見る
Organic-inorganic layered perovskite films, (C6H5C2H4NH3)2SnI4, were grown on 60°C substrates at a growth rate of 0.0005 nm/s by a vacuum vapor deposition technique, and field-effect transistors with a hybrid semiconductor were fabricated. From measurements of ultraviolet-visible (UV-VIS) absorption spectra and X-ray diffraction profiles, the vacuum-deposited films contained a well-developed layered perovskite structure, where inorganic sheets alternate with organic layers in the direction perpendicular to the substrate surface. In the field-effect transistors, the vacuum-deposited hybrid films acted as p-channel semiconductors and exhibited a hole mobility of 0.78 cm2/Vs in the saturation regime, a threshold voltage of $-1.7$ V, and a drain current on/off ratio of $4.2 \times 10^{5}$.
- Japan Society of Applied Physicsの論文
- 2004-09-15
著者
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MATSUSHIMA Toshinori
Department of Applied Science and Electronics and Materials, Graduate School of Engineering, Science
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Fujita Katsuhiko
Department Of Applied Science For Electronics And Material Chemistry Interdisciplinary Graduate Scho
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Tsutsui Tetsuo
Department Of Applied Science For Electronic And Materials Graduate School Of Engineering Sciences K
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Tsutsui Tetsuo
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan
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