Preparation of Conductive Organic–Inorganic Cubic Perovskite Thin Films by Dual-Source Vacuum Vapor Deposition
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概要
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We successfully obtained conductive organic–inorganic cubic perovskite CH3NH3SnI3 thin films by vacuum vapor deposition. The vacuum-deposited thin films showed a low electrical resistivity of $8.7\times 10^{-4}$ $\Omega$ cm. Furthermore, the cubic perovskite thin films could be patterned in the shape of a shadow mask by vacuum vapor deposition. A field-effect transistor (FET) comprising a pentacene thin film as a semiconductor and the cubic perovskite thin films as source–drain electrodes was fabricated. The FET with the cubic perovskite top-contact source–drain electrodes revealed typical field-effect characteristics. The saturation-regime hole mobility, drain current on/off ratio, and threshold voltage of the FET were 0.004 cm2/(V$\cdot$s), $1.2\times 10^{3}$, and $-7.2$ V, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
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MATSUSHIMA Toshinori
Department of Applied Science and Electronics and Materials, Graduate School of Engineering, Science
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Fujita Katsuhiko
Department Of Applied Science For Electronics And Material Chemistry Interdisciplinary Graduate Scho
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Tsutsui Tetsuo
Department Of Applied Science For Electronic And Materials Graduate School Of Engineering Sciences K
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