Emergence of n-Type Characteristic of Conjugated Polymer Field-Effect Transistors with Calcium Source-Drain Electrodes
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概要
- 論文の詳細を見る
We fabricated field-effect transistors (FETs) using a highly soluble fluorene-based polymer as an active layer utilizing a low-work-function metal, calcium as a source-drain electrode material. The n-type characteristic of polymer FETs was successfully realized by lowering the electron injection barrier, although polymer FETs with gold source-drain electrodes did not exhibit n-type or p-type characteristic. The well-defined n-type FET provides a useful means of measuring the electron transport property of new organic semiconductors.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-11-15
著者
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Fujita Katsuhiko
Department Of Applied Science For Electronics And Material Chemistry Interdisciplinary Graduate Scho
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Tsutsui Tetsuo
Department Of Applied Science For Electronic And Materials Graduate School Of Engineering Sciences K
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Yasuda Takeshi
Department Of Agricultural Chemistry Kyoto University
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