微細キャパシタ構造における抵抗変化メモリ（ReRAM）のフィラメント特性

概要

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Clarification of memory characteristics of tiny cells is important for practical use of resistive random access memory (ReRAM). However, the limitation of semiconductor micro-fabrication technology hinders to obtain memory characteristics in tiny cell with an area comparable to the size of ReRAM filaments. In this paper, we established a method to prepare a very small memory cell by fabricating ReRAM structure on the tip of the cantilever of atomic force microscope (AFM). We also established a method to avoid the overshoot of set current. As a result, reset current was successfully reduced enough to suppress serious damage to the cantilever. The effective cell size was estimated to be less than φ 10 nm due to electric field concentration at the tip of the cantilever, which was confirmed by an electromagnetic field simulator based on finite element method.