反応性スパッタリングによる酸化モリブデン薄膜の作製とその構造

概要

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Molybdenum oxide films containing various amount of oxygen have been prepared by means of reactive sputtering method. Changing the partial pressure of oxygen from 5×10-6 to 5×10-4 Torr in argon gas (total pressure is maintained at 5×10-3 Torr), the deposition rate, electrical resistivity, structure and chemical composition of sputteled films have been observed. When the partial pressure of oxygen in argon-oxygen mixtures was increased, the deposition rate of films began to decrease drastically at oxygen partial pressures 6×10-5 Torr, presumably the resistivity of films began to increase rapidly, at the same critical pressure of oxygen. Electron prove X-ray microanalysis showed that the content of oxygen in sputtered films was increased with the oxygen partial pressue. In the X-ray diffraction analysis, it was found that molybdenum oxide MoO2 appeared suddenly in the sputtered films at the oxygen pressure of 1 ×10-4 Torr. On the bases of the experimental data, discussion was made on the mechanism of oxide formation during the reactive sputtering.
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