Si(001)c(4×4)-Snの走査トンネル顕微鏡 : 同軸型直衝突イオン散乱分光法による解析

概要

論文の詳細を見る
The c (4×4) super-lattice structure of Sn/Si (001) system has been studied using scanning tunneling microscopy (STM) and coaxial impact collision ion scattering spectroscopy (CAICISS). After heating at 1200°C, the clean Si (001) 2×1 surface is confirmed by using low-energy electron diffraction (LEED) and STM. After Sn deposition of 0.5 monolayer (ML), successively annealed it at 600°C, a c (4×4) super-lattice structure is formed. We obtain three kinds of protrusions in high-resolution STM images of Si (001) c (4×4) -Sn structure. One of them is very similar to that of recently reported c (4×4) -Si reconstruction. Others are new protrusions in c (4×4) -Sn, so it seems that these are ascribed to Sn dimer. We analyzed CAICISS spectra scattered from Sn atoms, compared with simulated results. As a result, Sn dimer is found to be buckled. Thus, we proposed the mixed ad-dimer model for c (4×4) -Sn structure.
日本真空協会の論文
2003-03-20