KN1-3 半導体・電子デバイスの材料強度問題におけるマルチスケールシミュレーションの応用(KN1 機械工学分野の「マイクロ・ナノ」)

概要

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As the size of semiconductor devices continues to shrink, the control of dislocation nucleation is becoming a severe problem due to high-accumulated stress. There are two aspects of dislocation problem. One is its propagation and the other is its nucleation. As for the dislocation propagation, I proposed a method to infer the initiation points and slip systems of nucleated dislocations through a combination of TEM observation and dislocation dynamics simulation based on FEM calculation. We applied our method to a shallow trench isolation (STE) structure. As for the dislocation nucleation, by combining molecular dynamics simulation with reaction pathway sampling, we observed the nucleation of a three-dimensional dislocation loop from a sharp corner in silicon and investigated the shear stress dependence of the activation energy and saddle-point configuration.
2009-10-15