1803 シリコンの固相成長速度への不純物原子の影響に関する分子動力学解析(J06-1 マイクロ・ナノ構造と変形解析,J06 計算マイクロ・ナノメカニクス)

概要

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Solid phase epitaxy (SPE) of Si is one of the most fundamental processes in semiconductor fabrication techniques. In this study, we investigated the effect of arsenic atoms on the rate of Si SPE by using molecular dynamics simulation. In the case of non-doped Si, an activation energy of SPE is found to be 2.1 eV±0.5eV, which shows good agreement with the experimental result (2.7 eV). The SPE rate increases by 2 times for 3 at% As doping and 100 times for 5 at% As doping and an activation energy remains to be constant. The increase in SPE rate would be enhanced by defect formation process in amorphous silicon, which reflects the increase in self-diffusion of silicon atoms caused by active As atoms.
一般社団法人日本機械学会の論文
2005-09-18