3J1-5 Brillouin散乱法による圧電性ワイドバンドギャップ半導体の面内方向電気特性評価(超音波物性・光超音波)

概要

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Non-contact electric property measurements are required in semiconductor samples to avoid mechanical and chemical damages at sample surface. We propose the measurement in the in-plane direction of the sample, using electromechanical coupling. Wide band-gap semiconductors such as GaN, AlN, ZnO, etc. have piezoelectric effect. Therefore, electric properties of these materials can be measured via an electromechanical coupling. To estimate the properties in the crystal with less than 1Ω・m, (which is general in intrinsic wide band-gap semiconductors), acoustic measurement above the GHz range is essential. Brillouin scattering method allows us to measure GHz bulk acoustic wave velocities in the in-plane direction without mechanical contact. We studied distribution of electric properties in a ZnO single crystal using the method.
超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
2009-11-18