チョクラルスキー法を用いたSI単結晶育成炉におけるフュージョンリング画像を用いた液面位置測定技術の開発(機械力学,計測,自動制御)

概要

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We have developed a new instrumentation technique for Si crystal growth process of Czochralski (CZ) method for the purpose of the quality improvement. The online measurement technique for the melt surface level of Si crystal in growth furnace using image of the fusion ring, which appears to surround solid liquid boundary of Si ingot, was developed. Our new technique can measure the melt surface level with high accuracy without the following influences, (i) the change of solid liquid boundary height during diameter change, and (ii) the habit lines of Si ingot. The accuracy of this method is confirmed within +/- 0.6 mm. This technique contributes to the improvement of CZ Si crystal quality.
一般社団法人日本機械学会の論文
2008-06-25