第一原理計算によるSi結晶中のCu不純物原子とドーパント原子の相互作用解析

概要

論文の詳細を見る
For finding the effective gettering center of cupper (Cu) impurity atom in silicon crystal, an interaction between interstitial Cu atom and substitutional dopant or carben (C) atom was studied by first principle calculations. The interaction energies of Cu and boron (B), antimony (Sb), arsenic (As), phosphorus (P) or C were estimated. It was found that only B can be an effective gettering center for Cu. This result indicates that heavily B doped p/p+epitaxial wafers will show a sufficient gettering efficiency for Cu contamination. The other calculations showed that vacancy (Vcy)-Sb, Vcy-As or Vcy-P complexes can be formed. In order to design the gettering center for Cu in n/n+epitaxial wafers, the interaction between these complexes and Cu was investigated. It was found that these complexes can be an effective gettering center for Cu. This result proposes a new Cu gettering technique in n/n+epitaxial wafers with the formation of Vcy-Sb, Vcy-As or Vcy-P complexes.
一般社団法人日本機械学会の論文
2005-08-25