チョクラルスキー法による単結晶Si引上炉における単結晶断面形状のオンライン測定技術の開発(機械力学,計測,自動制御)

概要

論文の詳細を見る
We have developed a new instrumentation technique for Si crystal growth process of Czochralski (CZ) method for the purpose of the productivity improvement. In this paper, we developed the online measurement technique for diameter profile of Si crystal in growth furnace. Our new technique can measure the crystal diameter profile with higher accuracy than conventional optical measurement. The features of this technique are the data correction method and the elimination method of the effect of crystal swing. The measurement error of maximum diameter is within 0.18mm, and the measurement error of minimum diameter is within 0.09mm. This technique contributes to the improvement of CZ Si crystal productivity.
一般社団法人日本機械学会の論文
2007-03-25