Dry Cleaning Technology for Removal of Silicon Native Oxide Employing Hot NH_3/NF_3 Exposure
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概要
- 論文の詳細を見る
A new dry cleaning technology for removal of silicon (Si) native oxides from contact holes employing a hot ammonium (NH_3)/nitrogen trifluoride (NF_3) mixture has been studied. The NH3/NF3 mixture heated at a high temperature in a quartz tube enabled etching of the silicon dioxide (SiO_2) film placed in the downstream region. The mechanism of the etching reaction which was investigated using in-situ infrared spectroscopy and X-ray photoelectron spectroscopy analysis was revealed as follows: NF_3 alone in the NH_3/NF_3 mixture was decomposed above 600℃, probably producing NEF_x (x = 1, 2) and fluorine atoms. These active species reacted with Ni-I3, thereby generating ammonium hydrogen fluoride (NH_4F・HF) and/or aminonium fluoride (NH_4F) in the gas phase which are considered to be SiO_2 etchants. The reaction of these molecules with SiO_2 generated an ammonium hexafluorosilicate ((NH_4)_2SiF_6) product on the Si surface which was liberated at a temperature above 70℃, leaving the hydrogen terminated surface. The application of this method to actual contact holes demonstrated successful removal of the Si native oxide grown on the Si surface at the hole bottom.
- 社団法人応用物理学会の論文
- 2002-08-15
著者
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YANAGISAWA Michihiko
Speedfam Co., Ltd.
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Ogawa Hiroki
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Ichiki Takanori
Department Of Electric And Electronic Engineering Toyo University
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Yanagisawa Michihiko
Speedfam Co. Ltd.
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Ogawa Hiroki
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology:(present Address) N
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ARAI Tomohau
Department of Electric and Electronic Engineering, Toyo University
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HORTIKE Yasuhiro
Department of Materials Engineering, School of Engineering, The University of Tokyo
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Arai Tomohau
Department Of Electric And Electronic Engineering Toyo University
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Hortike Yasuhiro
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Ichiki Takanori
Department of Bioengineering, Graduate School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Arai Tomoharu
Department of Electric and Electronic Engineering, Toyo University
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Ogawa Hiroki
Department of Chemistry, School of Science and Engineering, Waseda University
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