2611 SiCウェハの高温メカノケミカルポリシング(S74-1 砥粒加工(1),S74 砥粒加工)

概要

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Needs for SiC single crystals as next generation high power electronic and optoelectronic devices are increasing. Mechanochemical polishing (MCP) is suitable for the final damage-free surface finishing process for such extremely hard high functional materials. Cr_2O_3 is already known as one of the useful MCP abrasives for SiC crystals but actual use of Cr_2O_3 abrasive in the production field is hesitated because of anxiety of Cr^<6+> formation as the origin of the environmental pollution. In this paper possibility of α-Fe_2O_3 as a environmentally safe MCP abrasive is investigated. Polycrystalline SiC wafers are MCPed on a newly developed high temperature polishing machine. Results obtained are (1) α-Fe_2O_3 abrasive produces the highest polishing efficiency at a polishing temperature about 230℃, which is more efficient than that obtained by Cr_2O_3 abrasive polishing at any experimental temperature between R.T.〜330℃, (2) no mechanical scratches are detected suggesting no existence of subsurface damages and (3) unevenness per each crystal grain resulting in large surface roughness Ra over several tens nm is observed which is peculiar to MCP of anisotropic polycrystalline ceramics.
社団法人日本機械学会の論文
2005-09-18