重イオン照射によるGaAs中の欠陥生成過程

概要

論文の詳細を見る
Ion implantation is commonly regarded as a key technique to fabricate GaAs integrated circuits. Bombardment with energetic ions inevitably produces radiation damage, which must be annealed out to obtain good optical and electrical activities. To elucidate the process which determines the amount of the damage remaining in GaAs after ion bombardmeht at room temperature, thickness of the amorphous layers formed by bombardment with pulsed inert-gas-ion beams was measured and found to depend on the pulsing frequency of the ion beam. This result indicates that the defect reaction between the damage regions formed around/the tracks of the incident ions plays a dominant role in determining the amount of the damage. From this frequency dependence and the dose rate idependence, spatial and temporar ranges which characterize this inter-track reaction could be estimated.
明治大学の論文