熱CVD法によるInP基板上へのSiNx膜形成

概要

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The thin SiNx films were deposited on InP substrate by the thermal CVD system. The influences of the heating temperature, the flux of reaction gases (NH_3, Si_2H_6) and the pressure in the furnace on the films were examined. As the results of C-V measurement and the calculation of interface state density (Nss) for MIS structure, optimum values of the heating temperature and the reaction gas flux ratio were found. And it became clear that Nss value decreased with increasing of the pressure in the furnace.
明治大学の論文