Nitrogen-Doping Effects on Electrical Properties of Hydrogenated Microcrystalline Silicon as Studied by Electron Paramagnetic Resonance and Conductivity

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-01-15

著者

• IKOMA Tadaaki

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• TERO-KUBOTA Shozo

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• Tero‐kubota S

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Tero-kubota Shozo

  Institute For Chemical Reaction Science Tohoku University

• AKIYAMA Kensuke

  Kanagawa Industrial Technology Research Institute

• AKIYAMA Kimio

  Institute for Chemical Reaction Science, Tohoku University

• Akiyama K

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Ikoma Tadaaki

  Institute Of Multidisciplinary Research For Advanced Materials (imram) Tohoku University

• Akiyama Kimio

  Institute For Chemical Reaction Science Tohoku University

• EHARA Takashi

  School of Science and Engineering, Ishinomaki Senshu University

• AMINO Tetsuya

  School of Science and Engineering, Ishinomaki Senshu University

• SHINOMIYA Hiroyuki

  School of Science and Engineering, Ishinomaki Senshu University

• Amino Tetsuya

  School Of Science And Engineering Ishinomaki Senshu University

• Ehara Takashi

  School Of Science And Engineering Ishinomaki Senshu University

• Shinomiya Hiroyuki

  School Of Science And Engineering Ishinomaki Senshu University

関連論文

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• Epitaxial Yttria-stabilized Zirconia (YSZ) Film Deposited on Si(100) Substrate by YAG Laser
• Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266nm YAG Laser
• Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
• Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO_3 Films on (100)SrTiO_3 Substrates
• Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
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• Photoluminescence Properties from β-FeSi_2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
• Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator
• Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi_2 Thin Film by X-ray Diffraction Measurement
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• Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System
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• Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser
• Epitaxial Growth of Ferromagnetic Iron Silicide Thin Films on Silicon with Yttria-Stabilized Zirconia Buffer Layer
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• Photoluminescence Properties from $\beta$-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ
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