Effects of Ions on Property of a-SI:H Films Prepared by ECR Plasma CVD Method : Condensed Matter

概要

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A study has been made on the effect of ions on the structural and electrical properties of a-Si:H films prepared by ECR plasma CVD method using H_2, He and Ar as a plasma generation gas and SiH_4.Deposition rates of over 10μm/h can be achieved with H_2 and He plasma, while Ar plasma generation attains half the deposition rates of H_2 and He plasma. The increase of (SiH_2)_n chains in films is related to the reduced microwave power, increased pressure and positive DC bias voltage being applied to the substrates. The concentration of (SiH_2)_n chains dominates the photoconductivities. Films having the low concentration of (SiH_2)_n have ημτ of 6x10^<-7>cm^2/V after the depositions without substrate heating and 6x10^<-6>cm^2/V after annealing at 280℃ for 30min. The energy transfer of incident ions to the film surface plays the most important role in obtaining highly photoconductive films
社団法人応用物理学会の論文
1988-12-20