Formation of SiO_2 Films by Oxygen-Ion Bombardment

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1966-08-15

著者

• WATANABE Masanori

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• Tooi Atsutomo

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• Oxygen Doping Mecharnism of Semicrystalline Poly-p-Phenylene Sulfide for Novel Photoconductive Polymer Films
• Photoconductivity of O_2-Doped Poly-p-Phenylene Sulfide Films
• Effects of Ions on Property of a-SI:H Films Prepared by ECR Plasma CVD Method : Condensed Matter
• Pressure Dependent Characteristics of an Oak Ridge Type Duoplasmatron Ion Source : II. Composition of Hydrogen Ions.
• Mean Electron Energy of a Plasma Emerging from a Duoplasmatron Ion Source
• Formation of SiO_2 Films by Oxygen-Ion Bombardment
• Pressure Dependent Characteristics of an Ork Ridge Type Duoplasmatron Ion Source : I. Discharge Characteristics

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