Low Temperature Growth of Epitaxial (Ba, Sr)TiO_3 Thin Film by Sputter Molecular Beam Epitaxy Method
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概要
- 論文の詳細を見る
A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba, Sr)TiO_3 films are grown at a pressure below 6 × 10^<-4> Torr at a large target-substrate distance of 24cm. The highest temperature in all the deposition process including the in-situ post annealing is 350℃. Additionally, a very smooth surface is confirmed by an atomic force microscopy.
- 社団法人応用物理学会の論文
- 1999-09-30
著者
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渡部 行男
九大院理
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Watanabe Yoshihide
Department Of Electronics Faculty Of Engineering Tottori University
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渡部 行男
九州工業大学工学部電気工学科
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WATANABE Yukio
Kyushu Institute of Technology
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Horiguchi Atsushi
Kyushu Institute of Technology
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