Accurate Wavelength Measurements of the Absorption Lines in H_2O Vapor by a 0.8 μm AlGaAs Laser
スポンサーリンク
概要
- 論文の詳細を見る
The first results of accurate measurements of vacuum wavelengths of six spectral lines of a (2, 1, 1) vibration band H_2O were presented using a 0.8 μm AlGaAs laser. For these measurements, the technique known as the coincidence method was employed using a stabilized He-Ne laser as a wavelength standard. Accidental error was kept between 1.7×10^<-7> and 5.5×10^<-8>. Systematic error was estimated as being 2.0×10^<-8>.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
-
Tako Toshiharu
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
-
Ohtsu Motoichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
-
FUKUOKA Kazuo
International Cooperation Center for Science and Technology, Tokyo Institute of Technology
-
Tako Toshiharu
Research Laboratory Of Precision Machinery And Electonics Tokyo Institute Of Technology
-
Fukuoka Kazuo
International Cooperation Center For Science And Technology Tokyo Institute Of Technology:(present A
-
OHTSU Motoichi
International Cooperation Center for Science and Technology, Tokyo Institute of Technology
関連論文
- The Alternating Quarter-Wavelength Layers Coating on 1.55 μm GaInAsP/InP Laser Facets
- Lateral Integration of Zn and Al Dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe(Special Issue on Near-Field Optics and Its Applications)
- Fabrication of an Ultraviolet Light-Emitting Functional Probe of Sub-Micron Size by Photochemical Vapor Deposition
- Development of All-Semiconductor Laser Sources for Studies of ^Sr^+ Ions Confined in RF Trap
- Multirefiection of Cold Atoms in a Near-Field Optical Funnel
- High Efficiency Exitation of Cylindrical Optical Near Fields for Atom Guidance
- Superradiance and Dipole Ordering of an N Two-Level System Interacting with Optical Near Fields
- Superradiance and Dipole Ordering of an N Two-Level System Interacting with Optical Near Fields
- Iodine A bsorption-Line-Stabilized Frequency-Tunable Green Light Using Sum-Frequency Generation of Diode Lasers
- Vibration Analysis of Tuning Fork for Clock by Using the Speckle Method
- Orientational Order of Surface-Aligned Nematic Liquid Crystals
- Frequency Stability of an H_2CO-Stabilized He-Xe Laser in an Axial Magnetic Field
- AC Measurement of Seebeck Coefficient in Disk-Shaped Semiconductors Using CW-Lasers
- Excitation Spectrum of 3.39 μm Tansmission Modulation by Tunable CW-CO_2 Laser in p-Ge
- Theory of CW-Laser-Induced Dynamic Grating by Inter-Valence-Band Absorption in p-Type Semiconductors
- CW-Laser Induced Dynamic Grating and Subpicosecond Hole Relaxation Time in p-Ge
- Continuous Wavelength Sweep of External Cavity 630 nm Laser Diode without Antireflection Coating on Output Facet
- Nonlinear Mechanism of I-V Characteristics of MBM Diodes in Low Voltage Region
- Fabrication of a Ferromagnetic-Coated Fiber Probe with a Double-Layer Structure(Special Issue on Near-Field Optics and Its Applications)
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
- High Resolution Stark Spectroscopy of H_2CO at 3.51 μm by Saturated Absorption
- Frequency Stabilization of a He-Xe Laser Using a Stark Spectrum in H_2CO
- Asymmetrical Lamb Dip in a High-Gain 3.5 μm Xenon Laser. : II. Analysis of Experimental Results
- Asymmetrical Lamb Dip in a High-Gain 3.5 μm Xenon Laser. : I. Experiments
- Coloring Properties of Cholesteric Liquid Crystals with Large Pitch
- Saturated Dispersion Spectral Shape in CH_4 for Frequency Stabilization
- Improvements in the Long-Term Frequency Stability of the He-Xe Laser at 3.51μm
- Development of a Frequency-Offset-Locked He-Xe Laser at 3.51 μm
- Estimation of the Ultimate Frequency Stability of Semiconductor Lasers
- Frequency Stabilization of AlGaAs Semiconductor Lasers with External Grating Feedback
- A Novel Technique for Measuring the Frequency Deviation of Semiconductor Lasers Under Direct Modulation
- Frequency Stabilization of AlGaAs Semiconductor Laser Based on the ^Rb-D_2 Line
- Frequency Stabilization of AlGaAs Semiconductor Laser to the Absorption Line of Water Vapor
- Frequency Stabilization of AlGaAs DH Lasers
- Frequency Stability Measurement of Feedback Stabilized AlGaAs DH Laser
- Coherent Oscillation of Domains of Nematic Liquid Crystals in a DC Electric Field
- A Method of Measurement of the Pitch and Refractive Indices of Cholesteric Liquid Crystals Using Selective Reflections and Total Reflections : Polarized Light
- Frequency Stabilization of a He-^Ne Laser by lntraeavity Polarization Spectroscopy of CH_4
- Wavelength Measurement of an H_2CO-Stabilized He-Xe Laser at 3.51μm
- Structure of Striped Domains in Cholesteric-Nematic Mixtures
- Estimation of the Minority Carrier Diffusion Length by Near-Field Photocurrent Measurement of p-n Junction in Silicon using Multiwavelength Excitation
- Near-Field Photocurrent Measurements of Si p-n Junction under the Reverse-Bias Condition : Optical Properties of Condensed Matter
- Reflection-Resonance-Type Photon Scanning Tunneling Microscope
- Accurate Frequency Control of External-Cavity Laser Diode by Sideband Locking Technique
- Generation of Phase Conjugate Wave from a Visible InGaAlP Laser
- High-Speed Frequency Stabilization of AlGaAs Semiconductor Laser
- Achievements of the Quantum Noise Limited Frequency Stability in AlGaAs Semiconductor Laser
- Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer
- Frequency Stabilization of a He-^Ne Laser by Intracavity Polarization Spectroscopy of CH_4. II
- Observation of Saturated Absorption of the 3.39 μm Line in an External CH_4 Cell
- Rectifying Properties of W-Ni Point Contact Diode in CO_2 Laser Radiation
- Mode Competition in the 3.51 μm He-Xe Laser in an Axial Magnetic Field
- Relation Between Frequency and Intensity Stabilities in AlGaAs Semiconductor Laser
- Interference Method Using Polychromatic Light for the Determination of Refractive Indices and Birefringence of Liquid Crystals
- Limit of the Frequency Stability in AlGaAs Semiconductor Lasers
- A Simple Technique for Obtaining a Stable Frequency Sweep in a Waveguide CO_2 Laser
- Effect of Cell Width on the Structure of Williams Domain
- Ultrahigh Scanning Speed Optical Coherence Tomography Using Optical Frequency Comb Generators : Optics and Quantum Electronics
- Birefringence of n-Type Nematic Liquid Crystals Due to Electrically Induced Deformations of Vertical Alignment
- Saturated Absorption under Two-Mode Laser Oscillation
- Derivation of the spectral Width of a 0.8μm AlGaAs Laser Considering 1/f Noise
- A New Method for Determination of Line-Shape Parameters of High-Gain Laser Transition
- Accurate Wavelength Measurements of the Absorption Lines in H_2O Vapor by a 0.8 μm AlGaAs Laser
- Successive Transitions in Cholesteric Liquid Crystals
- Effect of the Temperature on the Electrohydrodynamic Instabilities in Nematic Liquid Crystals
- Accurate Measurements of the Wavelengths and Material Constants of 1.5 μm InGaAsP/InP Lasers
- Spectral Measurements of NH_3 and H_2O for Pollutant Gas Monitoring by 1.5 μm InGaAsP/InP Lasers
- Temporally Ordered Structure of a Nematic Liquid Crystal
- Linewidth Reduction of a 1.5 μm InGaAsP Laser by Electrical Feedback
- Sub-MHz Doppler-Free Spectral Line of 5^1S_0-5^3P_1 Intercombination Transition in Strontium
- Accumulative Atom Detection by Magneto-Optical Trap for Near-Field Optical Funnel
- Cause of Coherent Oscillation of Domains of Nematic Liquid Crystals in DC Electric Field