Relation Between Frequency and Intensity Stabilities in AlGaAs Semiconductor Laser
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概要
- 論文の詳細を見る
The frequency and intensity stabilities of an AlGaAs semiconductor laser are measured during free-running, frequency-stabilized and intensity-stabilized operations. Each stabilization mode is achieved by controlling the injection current. The experimental results are discussed and the causes for the frequency and intensity fluctuations considered. The feasibility of simultaneously stabilizing both the frequency and the intensity is also discussed. It is concluded that simultaneous stabilization cannot be achieved by controlling the injection current alone.
- 社団法人応用物理学会の論文
- 1983-07-20
著者
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Tako Toshiharu
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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TSUCHIDA Hidemi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Tsuchida Hidemi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Tako Toshiharu
Research Laboratory Of Precision Machinery And Electonics Tokyo Institute Of Technology
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