Frequency Stabilization of a He-^<22>Ne Laser by Intracavity Polarization Spectroscopy of CH_4. II
スポンサーリンク
概要
- 論文の詳細を見る
This paper reports the improvements in frequency stability of a saturated dispersion locked He-^<22>Ne laser at 3.39 μm. The intracavity polarization spectroscopy technique was employed to measure the saturated dispersion spectrum in CH_4 (the E component of the P (7) line in the ν_3 band), which was used as a frequency reference. To improve the frequency stability, the method using a Fabraday rotator was employed, which differs from that of the previous work. After stabilizing the temperature of the Faraday rotator crystal and the laser intensity, frequency stabilization was carried out. The highest frequency stability obtained was 3.0×10^<-13> " at the integration time of 500s.
- 社団法人応用物理学会の論文
- 1982-05-20
著者
-
Tako Toshiharu
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
-
Ohtsu Motoichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
-
Ohtsu Motoichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
-
Tako Toshiharu
Research Laboratory Of Precision Machinery And Electonics Tokyo Institute Of Technology
-
Ohtsu Motoichi
Researach Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
関連論文
- Vibration Analysis of Tuning Fork for Clock by Using the Speckle Method
- Orientational Order of Surface-Aligned Nematic Liquid Crystals
- Frequency Stability of an H_2CO-Stabilized He-Xe Laser in an Axial Magnetic Field
- AC Measurement of Seebeck Coefficient in Disk-Shaped Semiconductors Using CW-Lasers
- Excitation Spectrum of 3.39 μm Tansmission Modulation by Tunable CW-CO_2 Laser in p-Ge
- Theory of CW-Laser-Induced Dynamic Grating by Inter-Valence-Band Absorption in p-Type Semiconductors
- CW-Laser Induced Dynamic Grating and Subpicosecond Hole Relaxation Time in p-Ge
- Nonlinear Mechanism of I-V Characteristics of MBM Diodes in Low Voltage Region
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
- High Resolution Stark Spectroscopy of H_2CO at 3.51 μm by Saturated Absorption
- Frequency Stabilization of a He-Xe Laser Using a Stark Spectrum in H_2CO
- Asymmetrical Lamb Dip in a High-Gain 3.5 μm Xenon Laser. : II. Analysis of Experimental Results
- Asymmetrical Lamb Dip in a High-Gain 3.5 μm Xenon Laser. : I. Experiments
- Coloring Properties of Cholesteric Liquid Crystals with Large Pitch
- Saturated Dispersion Spectral Shape in CH_4 for Frequency Stabilization
- Improvements in the Long-Term Frequency Stability of the He-Xe Laser at 3.51μm
- Development of a Frequency-Offset-Locked He-Xe Laser at 3.51 μm
- Estimation of the Ultimate Frequency Stability of Semiconductor Lasers
- Frequency Stabilization of AlGaAs Semiconductor Lasers with External Grating Feedback
- A Novel Technique for Measuring the Frequency Deviation of Semiconductor Lasers Under Direct Modulation
- Frequency Stabilization of AlGaAs Semiconductor Laser Based on the ^Rb-D_2 Line
- Frequency Stabilization of AlGaAs Semiconductor Laser to the Absorption Line of Water Vapor
- Frequency Stabilization of AlGaAs DH Lasers
- Frequency Stability Measurement of Feedback Stabilized AlGaAs DH Laser
- Coherent Oscillation of Domains of Nematic Liquid Crystals in a DC Electric Field
- A Method of Measurement of the Pitch and Refractive Indices of Cholesteric Liquid Crystals Using Selective Reflections and Total Reflections : Polarized Light
- Frequency Stabilization of a He-^Ne Laser by lntraeavity Polarization Spectroscopy of CH_4
- Wavelength Measurement of an H_2CO-Stabilized He-Xe Laser at 3.51μm
- Structure of Striped Domains in Cholesteric-Nematic Mixtures
- High-Speed Frequency Stabilization of AlGaAs Semiconductor Laser
- Achievements of the Quantum Noise Limited Frequency Stability in AlGaAs Semiconductor Laser
- Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer
- Frequency Stabilization of a He-^Ne Laser by Intracavity Polarization Spectroscopy of CH_4. II
- Observation of Saturated Absorption of the 3.39 μm Line in an External CH_4 Cell
- Rectifying Properties of W-Ni Point Contact Diode in CO_2 Laser Radiation
- Mode Competition in the 3.51 μm He-Xe Laser in an Axial Magnetic Field
- Relation Between Frequency and Intensity Stabilities in AlGaAs Semiconductor Laser
- Interference Method Using Polychromatic Light for the Determination of Refractive Indices and Birefringence of Liquid Crystals
- Limit of the Frequency Stability in AlGaAs Semiconductor Lasers
- A Simple Technique for Obtaining a Stable Frequency Sweep in a Waveguide CO_2 Laser
- Effect of Cell Width on the Structure of Williams Domain
- Birefringence of n-Type Nematic Liquid Crystals Due to Electrically Induced Deformations of Vertical Alignment
- Saturated Absorption under Two-Mode Laser Oscillation
- A New Method for Determination of Line-Shape Parameters of High-Gain Laser Transition
- Accurate Wavelength Measurements of the Absorption Lines in H_2O Vapor by a 0.8 μm AlGaAs Laser
- Successive Transitions in Cholesteric Liquid Crystals
- Effect of the Temperature on the Electrohydrodynamic Instabilities in Nematic Liquid Crystals
- Temporally Ordered Structure of a Nematic Liquid Crystal
- Cause of Coherent Oscillation of Domains of Nematic Liquid Crystals in DC Electric Field