Development of a Frequency-Offset-Locked He-Xe Laser at 3.51 μm
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-08-05
著者
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Tako Toshiharu
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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OHTSU Motoichi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Ohtsu Motoichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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KOYAMA Ryohei
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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KUSNOWO Anung
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Kusnowo Anung
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Koyama Ryohei
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Tako Toshiharu
Research Laboratory Of Precision Machinery And Electonics Tokyo Institute Of Technology
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Ohtsu Motoichi
Researach Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
関連論文
- Vibration Analysis of Tuning Fork for Clock by Using the Speckle Method
- Orientational Order of Surface-Aligned Nematic Liquid Crystals
- Frequency Stability of an H_2CO-Stabilized He-Xe Laser in an Axial Magnetic Field
- AC Measurement of Seebeck Coefficient in Disk-Shaped Semiconductors Using CW-Lasers
- Excitation Spectrum of 3.39 μm Tansmission Modulation by Tunable CW-CO_2 Laser in p-Ge
- Theory of CW-Laser-Induced Dynamic Grating by Inter-Valence-Band Absorption in p-Type Semiconductors
- CW-Laser Induced Dynamic Grating and Subpicosecond Hole Relaxation Time in p-Ge
- Nonlinear Mechanism of I-V Characteristics of MBM Diodes in Low Voltage Region
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
- High Resolution Stark Spectroscopy of H_2CO at 3.51 μm by Saturated Absorption
- Frequency Stabilization of a He-Xe Laser Using a Stark Spectrum in H_2CO
- Asymmetrical Lamb Dip in a High-Gain 3.5 μm Xenon Laser. : II. Analysis of Experimental Results
- Asymmetrical Lamb Dip in a High-Gain 3.5 μm Xenon Laser. : I. Experiments
- Coloring Properties of Cholesteric Liquid Crystals with Large Pitch
- Saturated Dispersion Spectral Shape in CH_4 for Frequency Stabilization
- Improvements in the Long-Term Frequency Stability of the He-Xe Laser at 3.51μm
- Development of a Frequency-Offset-Locked He-Xe Laser at 3.51 μm
- Estimation of the Ultimate Frequency Stability of Semiconductor Lasers
- Frequency Stabilization of AlGaAs Semiconductor Lasers with External Grating Feedback
- A Novel Technique for Measuring the Frequency Deviation of Semiconductor Lasers Under Direct Modulation
- Frequency Stabilization of AlGaAs Semiconductor Laser Based on the ^Rb-D_2 Line
- Frequency Stabilization of AlGaAs Semiconductor Laser to the Absorption Line of Water Vapor
- Frequency Stabilization of AlGaAs DH Lasers
- Frequency Stability Measurement of Feedback Stabilized AlGaAs DH Laser
- Coherent Oscillation of Domains of Nematic Liquid Crystals in a DC Electric Field
- A Method of Measurement of the Pitch and Refractive Indices of Cholesteric Liquid Crystals Using Selective Reflections and Total Reflections : Polarized Light
- Frequency Stabilization of a He-^Ne Laser by lntraeavity Polarization Spectroscopy of CH_4
- Wavelength Measurement of an H_2CO-Stabilized He-Xe Laser at 3.51μm
- Structure of Striped Domains in Cholesteric-Nematic Mixtures
- Direct Observation of Developed Plastic Deformation and Its Application to Nondestructive Testing
- High-Speed Frequency Stabilization of AlGaAs Semiconductor Laser
- Achievements of the Quantum Noise Limited Frequency Stability in AlGaAs Semiconductor Laser
- Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer
- Frequency Stabilization of a He-^Ne Laser by Intracavity Polarization Spectroscopy of CH_4. II
- Observation of Saturated Absorption of the 3.39 μm Line in an External CH_4 Cell
- Rectifying Properties of W-Ni Point Contact Diode in CO_2 Laser Radiation
- Mode Competition in the 3.51 μm He-Xe Laser in an Axial Magnetic Field
- Relation Between Frequency and Intensity Stabilities in AlGaAs Semiconductor Laser
- Interference Method Using Polychromatic Light for the Determination of Refractive Indices and Birefringence of Liquid Crystals
- Limit of the Frequency Stability in AlGaAs Semiconductor Lasers
- A Simple Technique for Obtaining a Stable Frequency Sweep in a Waveguide CO_2 Laser
- Effect of Cell Width on the Structure of Williams Domain
- Birefringence of n-Type Nematic Liquid Crystals Due to Electrically Induced Deformations of Vertical Alignment
- Saturated Absorption under Two-Mode Laser Oscillation
- A New Method for Determination of Line-Shape Parameters of High-Gain Laser Transition
- Accurate Wavelength Measurements of the Absorption Lines in H_2O Vapor by a 0.8 μm AlGaAs Laser
- Successive Transitions in Cholesteric Liquid Crystals
- Effect of the Temperature on the Electrohydrodynamic Instabilities in Nematic Liquid Crystals
- Temporally Ordered Structure of a Nematic Liquid Crystal
- Cause of Coherent Oscillation of Domains of Nematic Liquid Crystals in DC Electric Field