Near-Field Photocurrent Measurements of Si p-n Junction under the Reverse-Bias Condition : Optical Properties of Condensed Matter
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概要
- 論文の詳細を見る
We measured the near-field photocurrent of the p-n junction on a Si substrate under the reverse-bias condition in order to estimate the dopant concentration of the p-n junction. The full-width at half maximum (FWHM) of the cross-sectional profile of the near-field photocurrent signal varied on changing the applied reverse-biased voltage according to the resulting change in the thickness of the depletion region. From the measured reverse-bias dependence of the FWHM of the cross-sectional profile, the local dopant concentration of the Si substrate was estimated as 3.5 ± 0.4 × 10^<16> cm^<-3>. This result shows good agreement with the value of dopant concentration (3.1 × 10^<16> cm^<-3>) evaluated from the device fabrication conditions.
- 社団法人応用物理学会の論文
- 2001-03-15
著者
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Fukuda Hiroaki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology:research
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OHTSU Motoichi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ohtsu Motoichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Fukuda Hiroaki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology:research
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