Estimation of the Minority Carrier Diffusion Length by Near-Field Photocurrent Measurement of p-n Junction in Silicon using Multiwavelength Excitation
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概要
- 論文の詳細を見る
Near-field photocurrent measurement is applied for the characterization of p-n junction of silicon devices. By using a multiwavelength excitation source, the penetration depth into the silicon substrate can be tuned from 10 nm to 685 nm. We have measured the minority carrier diffusion length from near-field photocurrent signals. The minority carrier diffusion lengths of an electron L_n and a hole L_p are estimated as 0.47 and 0.37 μm.
- 社団法人応用物理学会の論文
- 1999-05-15
著者
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Fukuda Hiroaki
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology:research
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OHTSU Motoichi
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Ohtsu M
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Ohtsu Motoichi
Interdisciplinary Graduate School Of Science And Engineering Tokyo Institute Of Technology
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KADOTA Yasushi
Research and Development Center, RICOH Co. Ltd.
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Kadota Yasushi
Research And Development Center Ricoh Co. Ltd.
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