Effect of Hole-Doping in High-T_c Ln_1Ba_2Cu_3O_<7-σ>(Ln=Nd,La,Pr) : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
- 1988-04-20
著者
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Asano Hajime
Institute Of Materials Science University Of Tsukuba
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UWE Hiromoto
Institute of Applied Physics, University of Tsukuba
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SAKUDO Tunetaro
Institute of Applied Physics,The University of Tsukuba
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Asano Hajime
Instiiute Of Materials Science University Of Tsukuba
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Han Tae-su
Institute Of Applied Physics University Of Tsukuba
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Uwe Hiromoto
Institure Of Applied Physics University Of Tsukuba
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Harada Ryusuke
Institute Of Applied Physics University Of Tsukuba
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YOKOYAMA Yasuharu
Corporate Research & Development Laboratory, Toa Nenryo Kogyo K. K.
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Sakudo T
Univ. Tsukuba Ibaraki
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Sakudo Tunetaro
Institure Of Applied Physics University Of Tsukuba
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YAGI Kazuhiro
Institute of Applied Physics, University of Tsukuba
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IHA Michiaki
Institute of Applied Physics, University of Tsukuba
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Yagi Kazuhiro
Institute Of Applied Physics University Of Tsukuba
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Yokoyama Yasuharu
Corporate Research & Development Laboratory
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Iha Michiaki
Institute Of Applied Physics University Of Tsukuba
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