Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Yamane Junji
Electron Beam Laboratory Faculty Of Engineering Osaka University
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KUROI Takashi
Electron Beam Laboratory, Faculty of Engineering, Osaka University
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UMEZAWA Kenji
Electron Beam Laboratory, Faculty of Engineering, Osaka University
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SHOJI Fumiya
Electron Beam Laboratory, Faculty of Engineering, Osaka University
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OURA Kenjiro
Electron Beam Laboratory, Faculty of Engineering, Osaka University
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HANAWA Teruo
Electron Beam Laboratory, Faculty of Engineering, Osaka University
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Shoji Fumiya
Electron Beam Laboratory Faculty Of Engineering Osaka University
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Hanawa Teruo
Faculty Of Engineering Osaka University:osaka Institute Of Technology
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Hanawa Teruo
Electron Beam Laboratory Faculty Of Engineering Osaka University
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Umezawa K
Osaka Prefecture Univ. Osaka Jpn
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Umezawa Kenji
Department Of Materials Science Osaka Prefecture University
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Kuroi Takashi
Electron Beam Laboratory Faculty Of Engineering Osaka University
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Oura Kenjiro
Electron Beam Laboratory Faculty Of Engineering Osaka University
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Shoji Fumiya
Faculty Of Engineering Osaka University
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Oura Kenjiro
Faculty Of Engineering Osaka University
関連論文
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- Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method : Surfaces, Interfaces and Films
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Magnetic Properties of β-FeSi_2 Semiconductor
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- An Interpretation of Discrete Energy Loss in He^+ Ion Scattering from W Surfaces Containing Oxygen
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