Elastic Recoil Detection Analysis of the Concentration and Thermal Release of Hydrogen in a-Si:H Films by the ECR Plasma CVD Method
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概要
- 論文の詳細を見る
For the a-Si:H films prepared by ECR plasma CVD, the hydrogen content and its variation associated with heat treatment have been studied by means of 6.06 MeV-^<19>F-ERDA. It was found that as the deposition temperature was elevated from room temperature(RT) to 573 K, the hydrogen content in the film abruptly decreased. The activation energy for detrapping was estimated to be 0.84±0.02 eV for the Si-H bonds of two films prepared at RT and at 573 K. For a film prepared on a 5-in.-diameter Si wafer at RT, the film thickness was uniform in the error range of ±3% within the distance from the center to the edge of the wafer, while the hydrogen content fluctuated over the range of 20% near the edge.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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Shoji Fumiya
Faculty Of Engineering Kyushu Kyoritsu University
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Shoji Fumiya
Faculty Of Engineering Kobe University
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Hanawa Teruo
Faculty Of Engineering Osaka University:osaka Institute Of Technology
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Hanawa Teruo
Faculty Of Engineering Osaka University
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Umezawa K
Osaka Prefecture Univ. Osaka Jpn
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Umezawa Kenji
Department Of Materials Science Osaka Prefecture University
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Oura Kenjiro
Faculty Of Engineering Osaka Univetsity
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UMEZAWA Kenji
Faculty of Engineering, Osaka University
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Shoji Fumiya
Faculty Of Engineering Osaka University
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Oura Kenjiro
Faculty Of Engineering Osaka University
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