In Situ Extended X-Ray Absorption Fine Structure Study on the Local Structure around Gallium in Liquid Silicon
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概要
- 論文の詳細を見る
The local structure around gallium of 0.5, 1 and 5 at.% in liquid silicon at 1440℃ has been investigated by the extended X-ray absorption fine structure (EXAFS). The amplitude of EXAFS oscillations is distinct for the very dilute case of 0.5 at.% gallium. The EXAFS analysis shows that the structural parameters of Ga-Si pairs change from 2.8 atoms at a distance of 2.36Å to 2.1 atoms at a distance of 2.43Å with increasing gallium content in liquid silicon. These results suggest that a certain local structure around gallium in liquid silicon is formed at low gallium content and that this structural feature disappears with increasing gallium content.
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Waseda Yoshio
Institute for Advanced Materials Processing, Tohoku University
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KAWANISHI Soroku
Kimura Metamelt Project, ERATO, JRDC, Tsukuba Research Consortium
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Shinohara A
Kimura Metamelt Project Erato0 Research Development Corporation Of Japan:(present Address) Faculty O
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Omote Kazuhiko
Kimura Metamelt Project Erato0 Research Development Corporation Of Japan:(present Address) Institute
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Waseda Yoshio
Institute For Advanced Materials Processing
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SHINOHARA Armando
Kimura Metamelt Project, ERATO0, Research Development Corporation of Japan
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Kawanishi Soroku
Kimura Metamelt Project Erato0 Research Development Corporation Of Japan:(present Address) Sumitomo
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