強磁性半導体トンネル接合におけるスピン注入磁化反転(<特集>磁化反転の新たな描像)

概要

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Electrical magnetization reversal in the absence of magnetic fields is attracting great interest on account of its potential the application to high-density magnetic memories. Experimental confirmations of the theoretical predictions of current-driven magnetization reversal due to spin-transfer torque exerted by spinpolarized currents have mostly been carried out on metal CPP-GMR structures. The critical current density J_c required for magnetization reversal in these systems is of the order of 10^7 A/cm^2 or even higher, and its reduction is a current focus of research. In this article, we demonstrate current-driven magnetization reversal in a ferromagnetic semiconductor system, a (Ga, Mn)As/GaAs/(Ga, Mn)As magnetic tunnel junction (MTJ), at J_c=1-2×10^5 A/cm^2. The basic properties of (Ga, Mn)As itself and its MTJ are also described.
社団法人日本磁気学会の論文
2005-05-01