(CoFeB)-(SiO_2)系GHz薄膜磁心の高電気抵抗化 : ソフト磁性材料

概要

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(CoFeB)-(SiO_2) soft magnetic film with an electrical resistivity of over 5000 μΩcm (0.5 Ωm) was deposited on glass substrates by using synchronous triple-rf magnetron sputtering. The magnetostatic properties and high-frequency permeability characteristics of the films were investigated. The film in as-dep. state exhibited a maximum electrical resistivity of about 115,600 μΩcm (11.56 Ωm), with a uniaxal anisotropy field H_k of about 250 Oe , a hard axis coercivity H_<Ch> of 5.6 Oe and a saturated magnetization 4 π M_s of 8.3 kG. In the permeability characteristics of the film, the real part of the relative permeability was 50, which exhibited a good flat frequency dependence until 2 GHz. The resonance frequency was more than 3 GHz. It was found that a drastic increase in the resistivity was possible to the range over 100,000 μΩcm (10^<-3>Ωm).
社団法人日本磁気学会の論文
2002-04-01