820 動的応力解析による狭ピッチワイヤボンディング接合部の接合性評価

概要

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Wire bonding-that is, connecting LSI chip pad and an interposer substrate by a thin gold wire-is one of the main process in assembly of LSI packages. However, producing a fine-pitch wire bonding, such as that with less than 50-μm pitch, faces some problems. For example, a high-rigidity wire prevents wire flow during molding process, but deteriorates the bondability between the gold ball and an alminum pad on the LSI chip in the bonding process. Accodingly, in this study, we carried out a dynamic stress analysis on a real bonding process in order to clarify the bonding mechanism. It was found that the strain distribution of gold ball bonding interface in the direction of ultrasonication is the main factor for evaluating the bondability between the gold ball and the alminum pad. It was also found that it is possible to evaluate the effect of chip damage on the wire bonding process.
社団法人日本機械学会の論文
2002-09-20