五酸化バナジウム厚膜へのルビーレーザー照射効果

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A process for reduction and simultaneous sintering in air was developed by a laser beam irradiation method, and VO_2 films were prepared from V_2O_5 printed on alumina substrates. Thick V_2O_5 films 40 μm thick screen-printed on alumina substrates were irradiated by a ruby laser beam for 2 ms in air at 350℃. The energy density of the beam was varied from 0 to 26 ・cmJ^<-2>. X- ray analysis and measurement of the electrical resistance were carried out at various temperatures including the phase transformation temperature. The change of film thickness by the irradiation was measured also. Irradiation energy densities lower than 9 ・J cm^<-2> caused only the sintering of V_2O_5 films. However, the reduction of V_2O_5 into lower oxides took place at the energy densities higher than 9 ・cmJ^<-2>. By 9 ・cmJ^<-2> irradiation, a mixture of V_3O_7 and VO_2 was obtained. Between 10 and 26 ・cmJ^<-2>, only VO_2 was obtained. In the latter case, concentration ratio of VO_2 to residual V_2O_5 in a specimen was estimated to be about 1 ; 2. VO_2 crystals thus obtained had a tendency to orient with their [001]_r axes parallel to the substrate surface, where the suffix "r" indicates the axes for the retile-type lattice. The logarithmic electrical resistance of specimens irradiated with 26 ・cmJ^<-2> beam decreased by a factor of 2.1 above the critical temperature. After 300 heat cycles between 40° and 100℃, the logarithmic resistance ratio decreased to 1.1. The lattice parameters and the unit volume were determined by X-ray analysis.
社団法人日本セラミックス協会の論文
1988-08-01

五酸化バナジウム厚膜へのルビーレーザー照射効果

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