Electorical Conductivity of Interacting Fermions. : II.Effects of Normal Scattering Processes in the Presence of Umklapp Scattering Processes
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概要
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The electrical resistivity dtme only to untrttral Cotrlotaab inter?tction of the d-din?ensional latticeelectron systetaas (d >2) in tlae presence of' Utaaklapp scattering processes is sttrdied on the bsrsisof the Ferrni liqtrid theory. It is shoxvn th;tt norrt?al scattering processes generally contribtrte tothe resistivity if Utaaklapp scattering jcrocesses are present. This ['act gives a nattrral explatnationof flue resistivity of the d : cc Htrblcard ttaodel wlaich is deterrmined only' by the dataaping rate ofqtrasi-particles, 7. In the case of' d : 2, howex'er, it is shoxvn tlaat the resistivity is proportionalto T', T being the ternperattrre, even when nornaal scattering processes, which give T' logTcontribtrtion to 7, contribtrte to the resistixxity. In the special case of the sqtrare lattice, wherethe trans['er integrals are only betxveen the nearest neighlcors, the coefficient of' the V"-tertaa inthe second order of' the interaction is shoxvn to diverge as (l/(5) log(l/d) when 75 -) 0, 6 Ioeingthe doping rate away frouaa h?rl['-filling.
- 社団法人日本物理学会の論文
- 1998-01-15
著者
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FUKUYAMA Hidetoshi
Department of Applied Physics, Tokyo University of Science
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MAEBASHI Hideaki
Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research, Osaka U
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Maebashi Hideaki
Department Of Condensed Matter Physics The Institute Of Scientific And Industrial Research Osaka Uni
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Fukuyama Hidetoshi
Department Of Applied Physics Faculty Of Science Tokyo University Of Science
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Fukuyama Hidetoshi
Department Of Physics Faculty Of Science University Of Tokyo
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Fukuyama Hidetoshi
Department of Applied Physics and Research Institute for Science and Technology, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
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Fukuyama Hidetoshi
Department of Physics,Faculty of Science,University of Tokyo
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