Quantized Conductance of One-Dimensional Doped Mott Insulator
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概要
- 論文の詳細を見る
Possible modification of the quantized conductance of a one-dimensional doped Mott insulator,where the Umklapp scattering plays an important role, is studied based on the method by Maslov,Stone and Ponomarenko. At T : O and away f'rom half-filling, the conductance is quantizedas g :: 2e'/h and there is no renorrnalization by the Umklapp scattering process. At finitetemperatures, however, the quantization is influenced by the gate voltage and temperature.
- 社団法人日本物理学会の論文
- 1997-11-15
著者
-
OGATA Masao
Department of Physics, University of Tokyo
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FUKUYAMA Hidetoshi
Department of Applied Physics, Tokyo University of Science
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Fukuyama Hidetoshi
Department Of Physics Univercsity Of Tokyo
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Mori Michiyasu
Institute For Materials Research Tohoku University:crest Japan Science And Technology Agency
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