Light Scattering by Electronic Excitations in n-Type GaAs-Al_xGa_<1-x>As Superlattices
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概要
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We present a theory of resonant inelastic light scattering by spin-density andcharge-density excitations in modulation doped n-type GaAs-AN,Ga) -,Assuperlattices. The scattering cross section is expressed by dynamical polarizabilityfunctions, which are calculated by taking into account the Coulomb interactionbetween carriers, the dynamical exchange-correlation effect, and the interactionwith the LO phonons based on the subband structures calculated self-consistently.The spectra calculated in the. multiple-quantum-well model are in excellentaccord with experimental results so far obtained for low-energy excitations.There remains some disagreement for spectra corresponding to transitions tohigh-energy excited states.
- 社団法人日本物理学会の論文
- 1985-04-15
著者
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Katayama Shin'ichi
General Education Department Niigata University
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Ando Tsuneya
Institute For Solic State Physics University Of Tokyo
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Katayama Shin′ichi
General Education Department,Niigata University
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